Full metadata record
DC pole | Hodnota | Jazyk |
---|---|---|
dc.contributor.author | Huynh, Nhu | |
dc.contributor.author | Cherian, Hebin | |
dc.contributor.author | Ahn, Ethan C. | |
dc.contributor.editor | Pinker, Jiří | |
dc.date.accessioned | 2021-10-27T10:54:52Z | |
dc.date.available | 2021-10-27T10:54:52Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | 2021 International Conference on Applied Electronics: Pilsen, 7th – 8th September 2021, Czech Republic, p. 55-58. | en |
dc.identifier.isbn | 978–80–261–0972–3 (Print) | |
dc.identifier.isbn | 978–80–261–0973–0 (Online) | |
dc.identifier.issn | 1803–7232 (Print) | |
dc.identifier.issn | 1805–9597 (Online) | |
dc.identifier.uri | http://hdl.handle.net/11025/45566 | |
dc.format | 4 s. | cs |
dc.format.mimetype | application/pdf | |
dc.language.iso | en | en |
dc.publisher | University of West Bohemia | en |
dc.rights | © University of West Bohemia, 2021 | en |
dc.subject | hardwarové zabezpečení | cs |
dc.subject | zobrazení útoky | cs |
dc.subject | SEM | cs |
dc.subject | EDX | cs |
dc.subject | vznikající NVM | cs |
dc.subject | STT-MRAM | cs |
dc.subject | RRAM | cs |
dc.title | Hardware Security of Emerging Non-Volatile Memory Devices under Imaging Attacks | en |
dc.type | conferenceObject | en |
dc.type | konferenční příspěvek | cs |
dc.rights.access | openAccess | en |
dc.type.version | publishedVersion | en |
dc.description.abstract-translated | The emerging non-volatile memory (NVM) devices are currently changing the landscape of computing hardware. However, their hardware security remains relatively unexplored in the field. This is a critical research problem because given that they are non-volatile, sensitive information may be vulnerable to various physical attacks unless properly encrypted. In this work, we investigated security vulnerability of two emerging non-volatile memory devices (STT-MRAM and RRAM) against the most commonly available, non-destructive physical attack – Scanning Electron Microscope (SEM) imaging. The central premise is that if any difference of memory cells in high resistance and low resistance (bit ‘1’ and ‘0’) states can be detected in SEM, stored data could possibly leak or be stolen by adversaries. It is concluded that unless advanced elemental analysis techniques such as energy dispersive x-ray spectroscopy (EDX) are used, it is very unlikely that the bit information stored in these memory cells leak out by imaging attacks. | en |
dc.subject.translated | hardware security | en |
dc.subject.translated | imaging attacks | en |
dc.subject.translated | SEM | en |
dc.subject.translated | EDX | en |
dc.subject.translated | emerging NVMs | en |
dc.subject.translated | STT-MRAM | en |
dc.subject.translated | RRAM | en |
dc.type.status | Peer-reviewed | en |
Vyskytuje se v kolekcích: | Applied Electronics 2021 Applied Electronics 2021 |
Soubory připojené k záznamu:
Soubor | Popis | Velikost | Formát | |
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Hardware_Security_of_Emerging_Non-Volatile_Memory_Devices_under_Imaging_Attacks.pdf | Plný text | 1,02 MB | Adobe PDF | Zobrazit/otevřít |
Použijte tento identifikátor k citaci nebo jako odkaz na tento záznam:
http://hdl.handle.net/11025/45566
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