Title:	Hardware Security of Emerging Non-Volatile Memory Devices under Imaging Attacks
Authors:	Huynh, Nhu Cherian, Hebin Ahn, Ethan C.
Citation:	2021 International Conference on Applied Electronics: Pilsen, 7th – 8th September 2021, Czech Republic, p. 55-58.
Issue Date:	2021
Publisher:	University of West Bohemia
Document type:	conferenceObject konferenční příspěvek
URI:	http://hdl.handle.net/11025/45566
ISBN:	978–80–261–0972–3 (Print) 978–80–261–0973–0 (Online)
ISSN:	1803–7232 (Print) 1805–9597 (Online)
Keywords:	hardwarové zabezpečení;zobrazení útoky;SEM;EDX;vznikající NVM;STT-MRAM;RRAM
Keywords in different language:	hardware security;imaging attacks;SEM;EDX;emerging NVMs;STT-MRAM;RRAM
Abstract in different language:	The emerging non-volatile memory (NVM) devices are currently changing the landscape of computing hardware. However, their hardware security remains relatively unexplored in the field. This is a critical research problem because given that they are non-volatile, sensitive information may be vulnerable to various physical attacks unless properly encrypted. In this work, we investigated security vulnerability of two emerging non-volatile memory devices (STT-MRAM and RRAM) against the most commonly available, non-destructive physical attack – Scanning Electron Microscope (SEM) imaging. The central premise is that if any difference of memory cells in high resistance and low resistance (bit ‘1’ and ‘0’) states can be detected in SEM, stored data could possibly leak or be stolen by adversaries. It is concluded that unless advanced elemental analysis techniques such as energy dispersive x-ray spectroscopy (EDX) are used, it is very unlikely that the bit information stored in these memory cells leak out by imaging attacks.
Rights:	© University of West Bohemia, 2021
Appears in Collections:	Applied Electronics 2021 Applied Electronics 2021

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