Title: | The first active tunable wideband impedance matching circuit |
Authors: | Godara, Balwant Fabre, Alain |
Citation: | Electroscope. 2008, č. 3. |
Issue Date: | 2008 |
Publisher: | Západočeská univerzita v Plzni, Fakulta elektrotechnická |
Document type: | článek article |
URI: | http://147.228.94.30/images/PDF/Rocnik2008/cislo3_2008/r2c3c7.pdf http://hdl.handle.net/11025/463 |
ISSN: | 1802-4564 |
Keywords: | radiofrekvenční aplikace;SiGe BiCMOS;proudové konvejory |
Keywords in different language: | radio-frequency applications;current conveyors;SiGe BiCMOS |
Abstract in different language: | The first transistor-based impedance matching circuit for radio-frequency (RF) applications is introduced in this paper. It adapts arbitrary output impedances of RF blocks to desired values between 50ohmand 250ohm, from 0 to 5GHz, while occupying only 0.005mm² of circuit area in a 0.35μm SiGe BiCMOS process. Its superiority over traditional passive-element networks can be resumed by the following facts: flexible performance without the need for redesigning the components; adaptation of arbitrary impedances to desired values by the simple means of biasing current; extremely small form factors (the smallest observed); and matching over several gigahertz. Application to a low-noise amplifier validates the new topology. |
Rights: | Copyright © 2007-2010 Electroscope. All Rights Reserved. |
Appears in Collections: | Číslo 3 (2008) Číslo 3 (2008) |
Files in This Item:
File | Description | Size | Format | |
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r2c3c7.pdf | 1,14 MB | Adobe PDF | View/Open |
Please use this identifier to cite or link to this item:
http://hdl.handle.net/11025/463
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