Title: | Description of the functional blocks for the cross-coupled charge pump design algorithm |
Authors: | Marek, Jan Hospodka, Jiří Šubrt, Ondřej |
Citation: | 2017 International Conference on Applied Electronics: Pilsen, 5th – 6th September 2017, Czech Republic, p.107-110. |
Issue Date: | 2017 |
Publisher: | Západočeská univerzita v Plzni |
Document type: | konferenční příspěvek conferenceObject |
URI: | http://hdl.handle.net/11025/35420 |
ISBN: | 978–80–261–0641–8 (Print) 978–80–261–0642–5 (Online) |
ISSN: | 1803–7232 (Print) 1805–9597 (Online) |
Keywords: | propojené nabíjecí čerpadlo;model;simulace;silná inverze;symbolický popis |
Keywords in different language: | cross-coupled charge pump;model;simulation;strong inversion;symbolic description |
Abstract in different language: | This paper presents the circuit model that is used for the cross-coupled charge pump design algorithm. Symbolic description of the pump stage model as an analog functional block for high-voltage application is firstly discussed. Design process has been done by using simplified BSIM model equations assuming the long channel MOSFET. Characteristics have been verified by ELDO Spice and compared with the found relationships. Static and dynamic parameters of the subcircuit have been tested in two-stages structure by LT Spice simulator. Analysis results show the consistency between model and real circuits characteristics under given conditions. Complex model provides the reliable results for significantly smaller strange capacitances in comparison with the main pump capacitances. The model can be used for design and prediction of the pump parameters without long-time simulation process. The strong inversion region of MOSFET is expected, thus equations are correct for other MOSFET models that are used in chip design (PSP). |
Rights: | © Západočeská univerzita v Plzni |
Appears in Collections: | Applied Electronics 2017 Applied Electronics 2017 |
Please use this identifier to cite or link to this item:
http://hdl.handle.net/11025/35420
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